Layer having functionality, method for forming flexible substrate having the same, and method for manufacturing semiconductor device

ABSTRACT

It is an object of the present invention to provide a method for forming a layer having functionality including a conductive layer and a colored layer and a flexible substrate having a layer having functionality with a high yield. Further, it is an object of the present invention to provide a method for manufacturing a semiconductor device that is small-sized, thin, and lightweight. After coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, after attaching an adhesive to the layer having functionality, the layer having functionality is peeled from the substrate. Further, after coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, an adhesive is attached to the layer having functionality. Thereafter, the layer having functionality is peeled from the substrate, and a flexible substrate is attached to the layer having functionality.

TECHNICAL FIELD

The present invention relates to a layer having functionality and amethod for forming a flexible substrate having the same. Further, thepresent invention also relates to a method for manufacturing asemiconductor device having a layer having functionality.

BACKGROUND ART

As a conventional method for forming a conductive layer serving as anantenna, a pixel electrode, a wiring, or the like over a flexiblesubstrate, the following methods are given: a method in which, after acomposition that contains particles with a metal element is printed overa flexible substrate by a screen printing method, the composition isheated and baked to form a conductive layer; and a method in which aconductive layer is formed over a flexible substrate by a platingmethod.

Patent Document 1: Japanese Published Patent Application No. 2004-310502

DISCLOSURE OF INVENTION

In order to form a low-resistance conductive layer by using acomposition that contains particles with a metal element, thecomposition is preferably heated at a high temperature, typically, 200°C. or higher to be baked. However, some flexible substrates have a lowglass transition temperature depending on a material, which is lowerthan a baking temperature of a composition that contains particles witha metal element. Therefore, there is a problem that a flexible substrateis transformed in a case of directly printing a composition thatcontains particles with a metal element over the flexible substrate andperforming heating and baking to form a low-resistance conductive layer.

On the other hand, in a plating method, a baking step is not necessary,and a low-resistance conductive layer can be formed at a comparativelylow temperature of a room temperature to 100° C., approximately.However, in a plating method, there are problems that dangerouschemicals such as sulfuric acid, hydrochloric acid, and a cyanogenscompound are used and that waste fluids become pollution.

Similarly to the above, a conventional color filter is generally formedusing a coloring resin, a colorant dispersed resin, or the like.However, in order to make the resin harden, a heating step at a highertemperature than a glass transition temperature of a flexible substrateis necessary. Therefore, it was difficult to directly form a coloredlayer over a flexible substrate.

On the basis of described above, it is an object of the presentinvention to provide a method for forming a layer having functionalityincluding a conductive layer and a colored layer, and a flexiblesubstrate that has a layer having functionality with a high yield.Further, it is also an object of the present invention to provide amethod for manufacturing a semiconductor device that is small-sized,thin, and lightweight.

One feature of the present invention is to include the steps of forminga layer having functionality after coating a substrate having heatresistance with a silane coupling agent, and peeling the layer havingfunctionality from the substrate after attaching an adhesive to thelayer having functionality.

Another feature of the present invention is to include the steps offorming a layer in which oxygen and silicon are combined and an inactivegroup is combined with the silicon over a substrate, forming a layerhaving functionality over the layer in which oxygen and silicon arecombined and an inactive group is combined with the silicon, and peelingthe layer having functionality from the substrate by dividing the layerin which oxygen and silicon are combined and an inactive group iscombined with the silicon after attaching an adhesive to the layerhaving functionality.

Another feature of the present invention is to include the steps offorming a layer having functionality after coating a substrate havingheat resistance with a silane coupling agent, peeling the layer havingfunctionality from the substrate after attaching an adhesive to thelayer having functionality, and attaching a flexible substrate to thelayer having functionality.

Another feature of the present invention is to include the steps offorming a layer in which oxygen and silicon are combined and an inactivegroup is combined with the silicon over a substrate having heatresistance, forming a layer having functionality over the layer in whichoxygen and silicon are combined and an inactive group is combined withthe silicon, peeling the layer having functionality from the substrateby dividing the layer in which oxygen and silicon are combined and aninactive group is combined with the silicon after attaching an adhesiveto the layer having functionality, and attaching a flexible substrate tothe layer having functionality.

Another feature of the present invention is a semiconductor device thatincludes the layer having functionality or a substrate having the layerhaving functionality.

It is to be noted that the layer in which oxygen and silicon arecombined and an inactive group is combined with the silicon, whichremains over one surface of the layer having functionality, may beremoved after peeing the layer having functionality. Alternatively, aflexible substrate may be attached to the layer having functionalityafter removing the layer in which oxygen and silicon are combined and aninactive group is combined with the silicon.

As a layer having functionality, a conductive layer serving as a wiring,an electrode, a pixel electrode, an antenna, or the like and aninsulating layer covering the conductive layer are given. It is to benoted that one surface of the conductive layer is in contact with asilane coupling agent in a manufacturing step, and another surface ofthe conductive layer is in contact with the insulating layer.

In addition, as a layer having functionality, a colored layer and aninsulating layer covering the colored layer are given. It is to be notedthat one surface of the colored layer is in contact with a silanecoupling agent in a manufacturing step, and another surface of thecolored layer is in contact with the insulating layer.

Further, in a case where a plurality of conductive layers or a pluralityof colored layers is included as a layer having functionality, aninsulating layer covers all conductive layers or all colored layers.

An insulating layer of a layer having functionality preferably serves asa protective film for preventing deterioration and oxidization of theconductive layer and the colored layer. In addition, the insulatinglayer preferably serves as a planarizing layer for moderating unevennessof the conductive layer and the colored layer.

As a method for forming a layer having functionality, a dropletdischarging method, a printing method such as screen printing, off-setprinting, relief printing, or gravure printing, or the like is given. Inaddition, an evaporation method using a metal mask, a CVD method, asputtering method, or the like is given. Further, a plurality of theabove methods can be used.

When a layer having functionality is formed using a composition, aheating temperature is desired to be set at greater than or equal to200° C. and less than or equal to 350° C., preferably greater than orequal to 200° C. and less than or equal to 300° C. When a heatingtemperature of the composition is less than 200° C., the composition isinsufficiently baked. Alternatively, when the composition is heated at ahigher temperature than 350° C., the layer in which oxygen and siliconare combined and an inactive group is combined with the silicon isreacted, and it becomes difficult to peel the layer having functionalityfrom the substrate afterwards with ease.

In a case where a layer having functionality has a conductive layerserving as an antenna, a semiconductor device capable of transmittingand receiving data wirelessly is a typical example of a semiconductordevice. Further, in a case where the layer having functionality is alayer having a pixel electrode, a display device is a typical example ofthe semiconductor device. Furthermore, in a case where the layer havingfunctionality is a colored layer, a display device is a typical exampleof the semiconductor device.

A layer in which oxygen and silicon are combined and an inactive groupis combined with the silicon is easily divided by physical force;therefore, a layer having functionality over the layer in which oxygenand silicon are combined and an inactive group is combined with thesilicon can be peeled from a substrate. Accordingly, the layer havingfunctionality that is formed over a substrate having heat resistance ispeeled from the substrate, and the layer having functionality can beeasily formed.

Further, by attaching the layer having functionality to a flexiblesubstrate having low heat resistance, a flexible substrate having alayer having functionality can be formed. Therefore, a layer havingfunctionality can be formed with a high yield by using a composition forwhich baking at a glass transition temperature of the flexible substrateor higher in a forming step is needed. In a case where a compositionthat contains particles with a metal element is used, a flexiblesubstrate having a low-resistance conductive layer can be formed with ahigh yield.

Further, by coating a layer in which oxygen and silicon are combined andan inactive group is combined with the silicon, of which surface energyis low, with a composition by a printing method, unevenness on a sideface of the printed composition can be reduced. Furthermore, the widthof the composition can be controlled to make the layer thin. Therefore,a layer of which the width and a distance between the adjacent layersare uniform can be formed. Moreover, a layer of which the width isminuter than that of a layer formed by a conventional printing methodcan be formed.

By using such a layer for an antenna, an antenna having little variationin inductance can be formed. In addition, an antenna having highelectromotive force can be formed. Further, by using such a layer for awiring, a pixel electrode, a colored layer, or the like, a semiconductordevice can be manufactured with a high yield. Furthermore, by using aflexible substrate having such a layer, a semiconductor device that issmall-sized, thin, and lightweight can be achieved.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A to 1E are cross-sectional views for each showing a forming stepof a functional layer of the present invention.

FIG. 2 is a cross-sectional view for showing a semiconductor devicehaving a functional layer of the present invention.

FIGS. 3A to 3E are cross-sectional views for each showing a forming stepof a functional layer of the present invention.

FIG. 4 is a cross-sectional view for showing a semiconductor devicehaving a functional layer of the present invention.

FIGS. 5A to 5E are cross-sectional views for each showing a forming stepof a functional layer of the present invention.

FIGS. 6A to 6E are cross-sectional views for each showing asemiconductor device having a functional layer of the present invention.

FIG. 7 is a top view for showing a forming a step of a functional layerof the present invention.

FIG. 8 is a chart for showing the relation between a heating temperatureand the resistance of a conductive layer of the present invention.

FIGS. 9A to 9E are cross-sectional views for each showing amanufacturing step of a semiconductor device of the present invention.

FIGS. 10A to 10D are cross-sectional views for each showing amanufacturing step of a semiconductor device of the present invention.

FIGS. 11A to 11C are cross-sectional views for each showing amanufacturing step of a semiconductor device of the present invention;

FIGS. 12A to 12D are cross-sectional views for each showing amanufacturing step of a semiconductor device of the present invention.

FIGS. 13A to 13D are cross-sectional views for each showing amanufacturing step of a semiconductor device of the present invention.

FIGS. 14A to 14C are top views for each showing a structure of anantenna that can be applied to the present invention.

FIGS. 15A and 15B are model views for each showing a forming step of afunctional layer of the present invention.

FIG. 16 is a view for showing a structure of a semiconductor device ofthe present invention.

FIGS. 17A to 17F are views for each showing an application example of asemiconductor device of the present invention.

FIGS. 18A to 18F are views for each showing an electronic deviceincluding a semiconductor device of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment Modes of the present invention will be described below withreference to drawings. However, the present invention can be implementedin various different modes, and it is easily understood by those skilledin the art that various changes and modifications of the modes anddetails are possible, unless such changes and modifications depart fromthe content and the scope of the invention. Therefore, the presentinvention is not construed as being limited to the description of thefollowing Embodiment Modes. It is to be noted that the same portion or aportion having the same function is denoted by the same referencenumeral in all drawings for explaining Embodiment Modes, and therepetitive explanation thereof is omitted.

Embodiment Mode 1

In this embodiment mode, one mode of a method for easily forming a layerhaving functionality will be explained with reference to FIGS. 1A to 1E,FIG. 2, FIG. 7, and FIGS. 15A and 15B. FIGS. 1A to 1E showcross-sectional views of a forming step of a layer having functionality.FIG. 2 shows a cross-sectional view of a semiconductor device capable oftransmitting and receiving data wirelessly (also referred to as an RFID(Radio Frequency Identification) tag, an IC chip, an IC tag, an ID chip,an ID tag, an RF chip, an RF tag, a wireless chip, and a wireless tag).FIG. 7 shows a top view of FIG. 1A. A cross section A-B in FIG. 1Acorresponds to a region A-B in FIG. 7. A layer having a conductive layeris used as a layer having functionality to explain this embodiment mode.In addition, the conductive layer here serves as an antenna. It is to benoted that this embodiment mode can be applied to a method for forming alayer having a colored layer as a layer having functionality instead ofa conductive layer. In addition, this embodiment mode can be applied toa method for forming a pixel electrode, a wiring, and an electrode, andthe like as a conductive layer, instead of an antenna.

As shown in FIG. 1A, a layer 102 in which oxygen and silicon arecombined and an inactive group is combined with the silicon is formed bycoating a substrate 101 with a silane coupling agent, a conductive layer103 is formed thereover, and an insulating layer 104 covering theconductive layer 103 is formed. It is to be noted that a layer havingfunctionality (hereinafter, referred to as a functional layer 105) canbe formed by the conductive layer 103 and the insulating layer 104.

As the substrate 101, a substrate having heat resistance against abaking temperature of the conductive layer 103 is preferably used.Typically, a glass substrate, a quartz substrate, a ceramic substrate, ametal substrate, a silicon wafer, or the like can be used.

As the layer 102 in which oxygen and silicon are combined and aninactive group is combined with the silicon, a layer having highadhesion to the substrate 101 and low surface energy compared to acomposition that is applied afterwards is preferably formed. The layer102 in which oxygen and silicon are combined and an inactive group iscombined with the silicon is formed by using a silane coupling agent.The saline coupling agent is a silicon compound indicated byR_(n)—Si—X_((4-n)) (n=1, 2, 3) (R is at least one selected from thefunctional groups of an alkyl group, an aryl group, a fluoroalkyl group,and a fluoroaryl group, and X is an alkoxyl group). A layer formed byusing the silane coupling agent becomes a layer in which oxygen andsilicon are combined and an inactive group is combined with the silicon.

As a typical alkoxyl group, an alkoxyl group having 1 to 4 carbon atoms,specifically, a methoxy group, an etoxy group, a propyloxy group, anisopropyloxy group, a butoxy group, an isobutoxy group, an s-butoxygroup, a t-butoxy group or the like is given.

The number of the alkoxyl group is 1 to 3 of monoalkoxysilane,dialkoxysilane, trialkoxysilane.

As a typical example of a silicon compound containing an alkyl group asR, alkoxysilane containing an alkyl group having 2 to 30 carbon atoms ispreferably used. Typically, ethyltriethoxysilane, propylethoxysilane,octyltriethoxysilane, decyltriethoxysilane, octadecyltriethoxysilane(ODS), eicosyltriethoxysilane, triacontyltriethoxysilane, and the likeare given.

As alkoxylsilane containing an aryl group as R, alkoxysilane containingan aryl group having 6 to 8 carbon atoms is preferably used. Typically,phenyltriethoxysilane, benzyltriethoxysilane, phenethyltriethoxysilane,toluiltriethoxysilane, and the like are given.

As alkoxylsilane containing a fluoroalkyl group as R, a fluoroalkylgroup having 3 to 12 carbon atoms is preferably used. Typically,(3,3,3-trifluoropropyl)trietoxysilane,(tridecafluoro-1,1,2,2-tetrahydrooctyl)trietoxysilane,(heptadecafluoro-1,1,2,2-tetrahydrodecyl)triethoxysilane,(henicosafluoro-1,1,2,2-tetrahydrodecyl)triethoxysilane, and the likeare given.

As alkoxylsilane containing a fluoroaryl group as R, alkoxysilanecontaining a fluoroaryl group having 6 to 9 carbon atoms is preferablyused. Typically, pentafluorophenyltriethoxysilane,(pentafluorophenyl)propyltriethoxysilane, and the like are given.

It is to be noted that the layer in which oxygen and silicon arecombined and an inactive group is combined with the silicon may beformed by using a solution in which a silane coupling agent is dissolvedin a solvent. As the solvent in this case, hydrocarbon such as toluene,xylene, or hexadecane, a halogen solvent such as chloroform,tetrachloride, trichloroethylene, or tetrachloroethylene, alcohol suchas methanol, ethanol, n-propanol, or isopropanol, and the like aregiven. As a method for forming the layer 102 in which oxygen and siliconare combined and an inactive group is combined with the silicon, adroplet discharging method, a printing method such as screen printing,off-set printing, relief printing, or gravure printing, or the like canbe used. Alternatively, a vacuum evaporation method, an evaporationmethod, a CVD method, a sputtering method, or the like can be used.Here, a droplet discharging method indicates a method for forming apredetermined pattern by discharging a droplet of a composition from aminute hole.

A composition is applied over the layer 102 in which oxygen and siliconare combined and an inactive group is combined with the silicon by acoating method, and the composition is heated to bake particles with ametal element, thereby forming the conductive layer 103. As a coatingmethod, a droplet discharging method, a printing method such as screenprinting, off-set printing, relief printing, or gravure printing, or thelike can be used. In addition, an evaporation method using a metal mask,a CVD method, a sputtering method, or the like can be used. Moreover, aplurality of the above methods can be used. Further, the composition isformed from particles with a metal element and a solvent for dispersingthe particles with a metal element.

A heating temperature of the composition is desirably greater or equalto 200° C. and less than or equal to 350° C., preferably, greater thanor equal to 200° C. and less than or equal to 300° C. When a heatingtemperature of the composition is lower than 200° C., the particles witha metal element is insufficiently baked and a conductive layer havinghigh resistance is formed. Alternatively, when the composition is heatedat a higher temperature than 350° C., the layer in which oxygen andsilicon are combined and an inactive group is combined with the siliconis reacted and it becomes difficult to peel the function layer from thesubstrate afterwards with ease.

As the particles with a metal element, one or more of conductiveparticles of Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe,Ti, Zr, and Ba, or a compound particle having the element can beappropriately used.

Further, as particles with a metal element, a compound that contains oneor more of elements of In, Ga, Al, Sn, Ge, Sb, Bi, and Zn, or two ormore of compound particles is heated and baked, thereby forming aconductive layer having a light transmitting property.

As the compound particle with a metal element, an inorganic saltparticle such as a metal halogen compound, a metal sulfated compound, ametal nitric compound, a metal oxide, a metal hydroxide, or a metalcarbonate compound, or an organic salt particle such as a metal aceticacid compound, a metal oxalic acid compound, or a metal tartaric acidcompound can be appropriately used.

A diameter of the particles with a metal element is preferably 1 nm to10 μm, 1 to 5 μm, 1 to 100 nm, 2 to 50 nm, further preferably, 3 to 20nm. By using such particles with a small grain size, the resistance of aconductive layer formed afterwards can be reduced.

In addition to the particles with a metal element, particles such ascarbon, silicon, or germanium may be appropriately used.

As the solvent for dispersing the particles with a metal element, estersuch as butyl acetate or ethyl acetate, alcohol such as isopropylalcohol or ethyl alcohol, methyl ethyl ketone, acetone, or an organicresin such as an epoxy resin or a silicon resin (silicone) isappropriately used.

As the conductive layer 103, a conductive layer serving as an antenna, awiring, a pixel electrode, an electrode, or the like can beappropriately formed.

Here, a shape of the composition that is applied over the layer 102 inwhich oxygen and silicon are combined and an inactive group is combinedwith the silicon will be explained with reference to FIGS. 15A and 15B.FIG. 15A is an enlarged model view for showing a region where thesubstrate 101 and the conductive layer 103 of FIG. 1A are contacted withthe layer 102 in which oxygen and silicon are combined and an inactivegroup is combined with the silicon of FIG. 1A. FIG. 15B is an enlargedview of a region where the layer 102 in which oxygen and silicon arecombined and an inactive group is combined with the silicon of FIG. 1Cis divided, and the conductive layer 103 is peeled from the substrate101.

In FIG. 15A, over the substrate 101, here, over a surface of a glasssubstrate, oxygen over the surface of the glass substrate and silicon inthe layer 102 in which oxygen and silicon are combined and an inactivegroup is combined with the silicon are combined, and the silicon and afunctional group R that is at least one selected from an alkyl group, anaryl group, a fluoroalkyl group, and a fluoroaryl group are combined.Further, the adjacent silicon is combined to each other through oxygen.Here, a substituent that is part of the functional group R is referredto as a CH₂ group and illustrated between the functional group R andsilicon. It is to be noted that various substituents are shown withoutlimitation to the CH₂ group as long as they are part of the functionalgroup R.

In addition, a functional group R that is at least one selected from analkyl group, an aryl group, a fluoroalkyl group, and a fluoroaryl groupis exposed on the surface of the layer 102 in which oxygen and siliconare combined and an inactive group is combined with the silicon.Further, the conductive layer 103 is formed in contact with thefunctional group R.

An inactive functional group R typified by at least one selected from analkyl group, an aryl group, a fluoroalkyl group, and a fluoroaryl groupis exposed on the surface of the layer 102 in which oxygen and siliconare combined and an inactive group is combined with the silicon;therefore, surface energy in the surface of the layer 102 in whichoxygen and silicon are combined and an inactive group is combined withthe silicon is relatively lowered.

Further, as carbon chain length of a functional group becomes longer, acontact angle becomes larger, and the surface energy is relativelylowered. Accordingly, a composition having different surface energy fromthe surface of the layer 102 is easily repelled, and the compositionflows over a surface of a film having small surface energy and stays ina stabilized shape.

In other words, the composition that is applied over the layer in whichoxygen and silicon are combined and an inactive group is combined withthe silicon becomes to have a shape for stabilizing the surface energyof the composition. Therefore, unevenness on a side face of the appliedcomposition is reduced. By drying and baking such a paste, a conductivelayer in which unevenness on a side face is moderated can be formed.

An insulating composition is applied by a coating method over an exposedportion of the layer 102 in which oxygen and silicon are combined and aninactive group is combined with the silicon and the conductive layer103, and heating and baking are performed, thereby forming theinsulating layer 104 covering the conductive layer 103. As a coatingmethod, the coating method for the conductive layer 103 can beappropriately used. Further, as the insulating composition, an organiccompound such as an acrylic resin, a polyimide resin, a melamine resin,a polyester resin, a polycarbonate resin, a phenol resin, an epoxyresin, polyacetal, polyether, polyurethane, polyamide (nylon), a furanresin, or a diallylphthalate resin; a siloxane polymer or analkylsiloxane polymer, an alkylsilsesquioxane polymer, a silsesquioxanehydride polymer, an alkylsilsesquioxane hydride polymer, or the liketypified by silica glass can be appropriately used.

In the present invention, the insulating layer 104 is preferably formedextending to an outer side 1001 of a region where the conductive layer103 is formed (an inside of a dot line 1000 of FIG. 7) as shown in FIG.7. That is, the insulating layer 104 is preferably formed to cover thewhole conductive layer so as not to expose part of the side face of theconductive layer from the insulating layer. As a result, the conductivelayer 103 is sealed by the insulating layer 104; therefore, oxidizationof the conductive layer and mixture of an impurity can be prevented, anddeterioration of the conductive layer can be suppressed. Further, sincethe insulating layer is formed so as to cover the whole conductivelayer, the functional layer can be peeled as one layer without beingdivided in a subsequent peeling step.

Next, an adhesive 106 is attached to a surface of the insulating layer104, typically, to part of or to the entire surface of the insulatinglayer 104; thereafter, the layer 102 in which oxygen and silicon arecombined and an inactive group is combined with the silicon isphysically divided with the use of the adhesive 106 as shown in FIG. 1B.Typically, the adhesive 106 is pulled up in a direction of an angle of 0degree with respect to the surface of the layer 102 in which oxygen andsilicon are combined and an inactive group is combined with the siliconor the insulating layer 104. The angle of θ degree is other directionsthan a horizontal direction, specifically, 0°<θ<180°, preferably,30°≦θ≦160°, more preferably, 60°≦θ≦120°. As a result, the layer 102 inwhich oxygen and silicon are combined and an inactive group is combinedwith the silicon is divided, and the functional layer 105 is peeled fromthe substrate 101 by dividing the layer 102 in which oxygen and siliconare combined and an inactive group is combined with the silicon. At thistime, a part 102 b of the layer in which oxygen and silicon are combinedand an inactive group is combined with the silicon remains over thesubstrate 101, and a part 102 a of the layer in which oxygen and siliconare combined and an inactive group is combined with the silicon remainsover a surface of the functional layer 105 having the conductive layer103. Thus, the layer 102 in which oxygen and silicon are combined and aninactive group is combined with the silicon works as a peeling layer.

Furthermore, in a case where a roller is provided over the adhesive 106and the layer 102 in which oxygen and silicon are combined and aninactive group is combined with the silicon is physically divided fromthe substrate by rotation of the roller, the angle of θ degree is0°<θ<90°, preferably, 0°<θ<45°. As a result, the functional layer 105can be peeled from the substrate 101 while a crack is prevented fromoccurring in the functional layer 105.

Here, a principle that the layer 102 in which oxygen and silicon arecombined and an inactive group is combined with the silicon is dividedand the functional layer 105 is peeled from the substrate 101 isexplained with the use of FIG. 15B. When the adhesive 106 is pulled upas shown in FIG. 1B, the binding power inside the inactive group islowered as compared to adhesion between a surface of the substrate 101and the layer 102 in which oxygen and silicon are combined and aninactive group is combined with the silicon and adhesion between thelayer 102 in which oxygen and silicon are combined and an inactive groupis combined with the silicon and the conductive layer 103. In otherwords, the binding power inside the inactive group is weak as comparedto binding power of oxygen and silicon over the substrate 101 andadhesion between the conductive layer 103 and the layer 102 in whichoxygen and silicon are combined and an inactive group is combined withthe silicon. Therefore, as shown in FIG. 15B, combination of thefunctional group R that is at least one selected from an alkyl group, anaryl group, a fluoroalkyl group, and a fluoroaryl group is partially cutoff, and the layer in which oxygen and silicon are combined and aninactive group is combined with the silicon is divided. As a result, thefunctional layer 105 can be peeled from the substrate 101.

Since the combination of the functional group R that is at least oneselected form an alkyl group, an aryl group, a fluoroalkyl group, and afluoroaryl group is partially cut off, a remaining part of the alkylgroup, the aryl group, the fluoroalkyl group, and the fluoroaryl groupis left over the surface of the substrate. Accordingly, a contact angleis large and the surface energy is relatively small over a surface ofthe part 102 b of the layer in which oxygen and silicon are combined andan inactive group is combined with the silicon that is divided.Therefore, a composition having different surface energy from thesurface of the part 102 b of the layer is easily repelled over thelayer, and the composition flows over a surface of a film having smallsurface energy and stays in a stabilized shape. As a result, thesubstrate 101 having the part 102 b of the layer in which oxygen andsilicon are combined and an inactive group is combined with the siliconthat is divided can be used for forming a functional layer again.

Here, as the adhesive 106, an optical plastic adhesive film, athermoplastic adhesive film, or the like can be used. Instead of a film,a tape, a sheet, a substrate, or the like can be appropriately used.Moreover, instead of using the adhesive, a material may be attached tothe surface of the insulating layer 104 by electrostatic force oradsorption power.

Next, as shown in FIG. 1D, the part 102 a of the layer in which oxygenand silicon are combined and an inactive group is combined with thesilicon that remains over a surface of the functional layer 105 havingthe conductive layer 103 may be removed. The part of the layer in whichoxygen and silicon are combined and an inactive group is combined withthe silicon can be removed by plasma irradiation of hydrogen, a raregas, nitrogen, or the like, or heating treatment at 400° C. or higher.Through the above step, a functional layer can be easily formed. Inaddition, a functional layer having a conductive layer in whichunevenness on a side face is reduced or a thinned conductive layer canbe easily formed.

Next, as shown in FIG. 1E, a flexible substrate 112 having an opening111 is attached to the functional layer 105. As the flexible substrate112, a substrate made from PET (polyethylene terephthalate), PEN(polyethylene naphthalate), PES (polyethersulfone), polypropylene,polypropylene sulfide, polycarbonate, polyetherimide, polyphenylenesulfide, polyphenylene oxide, polysulfone, polyphthalamide, or the like;and a substrate having a stacked layer of paper made of a fibrousmaterial and an adhesive organic resin (an acrylic-based organic resin,an epoxy-based organic resin, or the like) can be typically used. In acase of using the above substrate, the functional layer 105 and theflexible substrate 112 are attached with an adhesive organic resin layerinterposed therebetween, which is not illustrated.

Alternatively, as the flexible substrate 112, a film having an adhesivelayer that is subjected to adhesion treatment with an object to beprocessed by thermocompression (such as a laminating film (includingpolypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, orthe like)) may be used. The laminating film can be attached to an objectto be processed in such a way that an adhesive layer provided on anuppermost layer or a layer provided on an outermost layer (not theadhesive layer) is melted by heat treatment and then, by applyingpressure thereto, the film is attached to the object to be processed.

The opening 111 formed in the flexible substrate 112 can be formed byirradiating the flexible substrate with laser light and melting part ofthe flexible substrate. Alternatively, the flexible substrate issubjected to mechanical punching to form the opening.

By the above step, a flexible substrate having a functional layer can beformed with a high yield. Since heating at a sufficient temperature canbe performed, a flexible substrate having a low-resistance conductivelayer can be formed with a high yield. Further, a flexible substratehaving a functional layer that has a conductive layer in whichunevenness on a side face is reduced or a thinned conductive layer canbe formed with a high yield. Furthermore, in a case of forming anantenna by using these conductive layers, among a plurality of antennasthat is concurrently formed, a substrate having an antenna that haslittle variation in inductance can be formed. Moreover, a substratehaving an antenna that has little variation in electromotive force canbe formed.

Next, as shown in FIG. 2, a semiconductor device can be manufactured byattaching a flexible substrate 113 having a functional layer to asilicon chip 121.

Typically, connection terminals 123 and 124 of the silicon chip 121where a plurality of elements are formed and the conductive layer 103 ofthe functional layer are connected to each other with a conductiveparticle 126 contained in an anisotropic conductive adhesive agent 125,whereby a MOS transistor 122 and the conductive layer 103 areelectrically connected. As the plurality of elements, the MOStransistor, a capacitor element, a resistor, and the like are given.Here, the MOS transistor 122 is shown as one of the plurality ofelements. A thickness of the silicon chip is preferably 0.1 to 20 μm,further preferably, 1 to 5 μm.

The connection terminals 123 and 124 can be formed using titanium,nickel, gold, copper, or the like appropriately, by a printing method,an electrolytic plating method, an electroless plating method, asputtering method, or the like.

As a typical example of the anisotropic conductive adhesive agent 125,an adhesive resin containing the conductive particle 126 (a grain sizeis several nm to several tens μm, preferably about 3 to 7 μm), which isdispersed, such as an epoxy resin or a phenol resin can be given. Theconductive particle 126 is formed from an element selected from gold,silver, copper, palladium, and platinum; or a plurality of elements.Further, a particle having a multi-layer structure of these elements maybe used. Furthermore, a conductive particle in which a thin film that isformed from an element selected from gold, silver, copper, palladium,and platinum, or a plurality of the elements is formed over a surface ofa particle formed from a resin may be used.

The connection terminals 123 and 124 may be connected to the conductivelayer 103 by a method such as compression of an anisotropic conductivefilm and reflow treatment using a solder bump instead of the anisotropicconductive adhesive agent.

By the above step, a semiconductor device capable of transmitting andreceiving data wirelessly can be manufactured with a high yield.

Embodiment Mode 2

In this embodiment mode, one mode of a method for easily forming a layerhaving functionality will be explained with reference to FIGS. 3A to 3Eand FIG 4. FIGS. 3A to 3E each show a cross-sectional view of a step forforming a layer having functionality. FIG. 4 shows a cross-sectionalview of a liquid crystal display device as a display device in a casewhere the display device is used as a semiconductor device. A layerhaving a conductive layer serving as a pixel electrode is used as alayer having functionality to explain this embodiment mode.

As shown in FIG. 3A, a layer 102 in which oxygen and silicon arecombined and an inactive group is combined with the silicon is formedover a substrate 101, a conductive layer 131 is formed thereover, and aninsulating layer 132 covering the conductive layer 131 is formed. Afunctional layer 133 can be formed by the conductive layer 131 and theinsulating layer 132.

The substrate 101 and the layer 102 in which oxygen and silicon arecombined and an inactive group is combined with the silicon can beformed in a manner similar to that of Embodiment Mode 1.

A composition that contains particles with a metal element is appliedover the layer 102 in which oxygen and silicon are combined and aninactive group is combined with the silicon, and heating is performed ata temperature of greater than or equal to 200° C. and less than or equalto 350° C., preferably, greater than or equal to 200° C. and less thanor equal to 300° C. to bake the particles with a metal element, therebyforming the conductive layer 131. As a coating method, a dropletdischarging method, a printing method such as screen printing, off-setprinting, relief printing, or gravure printing, or the like can be used.Further, an evaporation method using a metal mask, a CVD method, asputtering method, or the like can be used. Furthermore, a plurality ofthe methods can be used. As the composition that contains particles witha metal element, a composition for forming a conductive layer having alight transmitting property is preferably used. Typically, a compositionthat contains a conductive particle having one or more of elements ofIn, Ga, Al, Sn, Ge, Sb, Bi, and Zn, or two or more of compoundsparticles can be used.

As the conductive layer 131, a conductive layer serving as a pixelelectrode is appropriately formed here. Typically, a striped-shapeconductive layer 131 is formed.

An insulating composition is applied over exposed portions of the layerin which 102 oxygen and silicon are combined and an inactive group iscombined with the silicon and the conductive layer 131 by a coatingmethod, and heating and baking are performed, thereby forming theinsulating layer 132 covering the conductive layer 131. As a coatingmethod, the coating method for the conductive layer 131 can beappropriately used. As the insulating composition, an acrylic resin,polyimide, or the like can be appropriately used. Here, the insulatinglayer 132 preferably serves as a protective layer for the conductivelayer 131, furthermore, an orientation film. Therefore, the insulatinglayer 132 may be subjected to rubbing treatment.

Through the above step, the functional layer 133 having a conductivelayer that serves as a pixel electrode can be formed.

Next, as shown in FIG. 3B, an adhesive 106 is attached to a surface ofthe insulating layer 132, typically, part of or an entire surface of theinsulating layer 132 in a similar manner to Embodiment Mode 1, andthereafter, the adhesive 106 is pulled up. As a result, as shown in FIG.3C, the layer 102 in which oxygen and silicon are combined and aninactive group is combined with the silicon is divided, and thefunctional layer 133 is peeled from the substrate 101. At this time, apart 102 b of the layer in which oxygen and silicon are combined and aninactive group is combined with the silicon remains over the substrate101, and a part 102 a of the layer in which oxygen and silicon arecombined and an inactive group is combined with the silicon remains overa surface of the functional layer 133 having the conductive layer 131.

Subsequently, as shown in FIG. 3D, the part 102 a of the layer in whichoxygen and silicon are combined and an inactive group is combined withthe silicon that remains over a surface of the functional layer 133having the conductive layer 131 may be removed in a manner similar tothat of Embodiment Mode 1. Through the above step, the functional layer133 can be easily formed.

Then, as shown in FIG. 3E, a flexible substrate 112 is attached to thefunctional layer 133.

Through the above step, a flexible substrate 134 having a pixelelectrode as a functional layer can be formed with a high yield.

Next, a flexible substrate 135 having a functional layer is similarlyformed. A sealant is applied in a region where the functional layer 133is not formed over one of the flexible substrates having functionality,and a liquid crystal material is applied inside the sealant. Then, theconductive layer 131 formed over the flexible substrate 134 and aconductive layer 136 formed over the flexible substrate 135 are arrangedto be intersected with each other at right angles, and attachment isperformed while a pressure is reduced. Please note that the conductivelayer 136 serves as an opposite electrode. As a result, a passive matrixliquid crystal display device including a sealant 141 for sealing theflexible substrates 134 and 135, the flexible substrates 134 and 135,and a liquid crystal layer 142 that is formed in a region surrounded bythe sealant is manufactured. By the above step, a liquid crystal displaydevice can be manufactured with a high yield. Further, a liquid crystaldisplay device that is. small-sized, thin, and lightweight can bemanufactured.

Embodiment Mode 3

In this embodiment mode, one mode of a method for easily forming a layerhaving functionality will be explained with reference to FIGS. 5A to 5Eand FIGS. 6A to 6E. FIGS. 5A to 5E each show a cross-sectional view of aforming step of a layer having functionality. As a layer havingfunctionality, a layer that optically functions such as a colored layer,a color conversion filter, or a photogram color filter can be given inthis embodiment mode. Here, a colored layer is used as a layer thatoptically functions to explain this embodiment mode.

As shown in FIG. 5A, a layer 102 in which oxygen and silicon arecombined and an inactive group is combined with the silicon is formedover a substrate 101, a colored layer is formed thereover, and aninsulating layer 158 covering a colored layer is formed. Here, lightshielding layers 151 to 154, a red colored layer 155, a blue coloredlayer 156, and a green colored layer 157 are shown as the colored layer.A functional layer 159 can be formed by the colored layer and theinsulating layer 158.

As a method for forming the colored layer, an etching method using acolored resin, a color resist method using a color resist, a stainingmethod, an electrodeposition method, a micelle electrolytic method, anelectrodeposition transfer method, a film dispersion method, an inkjetmethod (droplet discharging method), or the like can be appropriatelyused.

Here, a color filter is formed by an etching method using aphotosensitive resin in which colorant is dispersed. First, aphotosensitive acrylic resin in which black colorant is dispersed isapplied to the layer 102 in which oxygen and silicon are combined and aninactive group is combined with the silicon by a coating method.Subsequently, after the acrylic resin is dried and temporarily baked,exposure and development are performed, and then, the acryl is hardenedby heating at greater than or equal to 200° C. and less than or equal to350° C., preferably greater than or equal to 200° C. and less than orequal to 300° C., here, 220° C., to form the light shielding layers 151to 154 with a film thickness of 0.5 to 1.5 μm.

Next, photosensitive acrylic resins in each of which red colorant, greencolorant, and blue colorant are dispersed are applied to form the redcolored layer 155, the blue colored layer 156, and the green coloredlayer 157, each having a film thickness of 1.0 to 2.5 μm, by a stepsimilar to that of the light shielding layers 151 to 154.

Through the above step, the colored layer can be easily formed.

It is to be noted that the red colored layer indicates a colored layerthat transmits red light (light having a peak wavelength in the vicinityof 650 nm), the green colored layer indicates a colored layer thattransmits green light (light having a peak wavelength in the vicinity of550 nm), and the blue colored layer indicates a colored layer thattransmits blue light (light having a peak wavelength in the vicinity of450 nm).

An insulating composition is applied to exposed portions of the layer102 in which oxygen and silicon are combined and an inactive group iscombined with the silicon, the colored layers 155 to 157, and the lightshielding layers 151 to 154, and heating and baking are performed,thereby forming the insulating layer 158 covering the colored layers.The insulating layer 158 can be formed with a method and materialsimilar to those of the insulating layer 132 in Embodiment Mode 1.Further, the insulating layer 158 serves as a protective layer for thecolored layer.

Through the above step, the functional layer 159 that serves as acolored layer can be formed with a high yield.

Next, as shown in FIG. 5B, an adhesive 106 is attached to part of or toan entire surface of the insulating layer 158 in a manner similar tothat of Embodiment Mode 1, and thereafter, the adhesive 106 is pulledup.

As a result, the layer 102 in which oxygen and silicon are combined andan inactive group is combined with the silicon is divided, and thefunctional layer 159 is peeled from the substrate 101 as shown in FIG.5C. At this time, a part 102 b of the layer in which oxygen and siliconare combined and an inactive group is combined with the silicon remainsover the substrate 101, and a part 102 a of the layer in which oxygenand silicon are combined and an inactive group is combined with thesilicon remains over a surface of the functional layer 159 having thecolored layer.

Subsequently, as shown in FIG. 5D, the part 102 a of the layer in whichoxygen and silicon are combined and an inactive group is combined withthe silicon that remains over a surface of the functional layer 159having the colored layer may be removed in a manner similar to that ofEmbodiment Mode 1.

Then, as shown in FIG. 5E, a flexible substrate 112 is attached to thefunctional layer 159.

Through the above step, a flexible substrate having the functional layer159 can be formed with a high yield.

Embodiment Mode 4

In this embodiment mode, one mode of a method for manufacturing a liquidcrystal display device will be explained with reference to FIGS. 6A to6E. It is to be noted that FIGS. 6A to 6E each show a cross-sectionalview of a manufacturing step of a liquid crystal display device.

As shown in FIG. 6A, a layer 102 in which oxygen and silicon arecombined and an inactive group is combined with the silicon is formedover a substrate 101 by the step shown in FIG. 5A of Embodiment Mode 3,a colored layer including light shielding layers 151 to 154, a redcolored layer 155, a blue colored layer 156, and a green colored layer157 is formed thereover, and an insulating layer 158 covering thecolored layer is formed.

Next, an opposite electrode 160 is formed over the insulating layer 158,and an insulating layer 161 serving as an orientation film is formedthereover.

The opposite electrode 160 is formed over exposed regions of theinsulating layer 158 and the layer 102 in which oxygen and silicon arecombined and an inactive group is combined with the silicon. Theformation method and material of the conductive layer 131 serving as apixel electrode in Embodiment Mode 2 can be used similarly to that ofthe opposite electrode 160. Further, the opposite electrode 160 may beformed by using a sputtering method.

The insulating layer 161 can be formed by using the material and methodsimilar to those of the insulating layer 132 in Embodiment Mode 2appropriately.

Through the above step, a functional layer 162 can be formed.

Next, as shown in FIG. 6B, an adhesive 106 is attached to a surface ofthe insulating layer 161, typically, to part of or to the entire surfaceof the insulating layer 161, and thereafter, the adhesive 106 is pulledup in a θ direction in a manner similar to that of Embodiment Mode 1.

As a result, as shown in FIG. 6C, the layer 102 in which oxygen andsilicon are combined and an inactive group is combined with the siliconis divided, and the functional layer 162 is peeled from the substrate101. At this time, a part 102 b of the layer in which oxygen and siliconare combined and an inactive group is combined with the silicon remainsover the substrate 101, and a part 102 a of the layer in which oxygenand silicon are combined and an inactive group is combined with thesilicon remains over a surface of the functional layer 162 having thecolored layer. Thereafter, the part 102 a of the layer in which oxygenand silicon are combined and an inactive group is combined with thesilicon that remains over a surface of the functional layer 162 havingthe colored layer may be removed in a manner similar to that ofEmbodiment Mode 1.

Next, as shown in FIG. 6D, a flexible substrate 112 is attached to thefunctional layer 162.

Through the above step, a flexible substrate having the functional layer162 can be manufactured.

Next, as shown in FIG. 6E, an insulating layer 173 is formed over asubstrate 172. Over the insulating layer 173, a thin film transistor174, an interlayer insulating layer 175 that insulates a conductivelayer forming the thin film transistor 174, an interlayer insulatinglayer 176 covering the thin film transistor 174, and a pixel electrode177 that is formed over the interlayer insulating layer 176 andconnected to the thin film transistor 174 are formed. An insulatinglayer 178 serving as an orientation film is formed over the pixelelectrode 177 and the interlayer insulating layer 176. An active matrixsubstrate 171 is formed of the above components. The active matrixsubstrate 171 and the flexible substrate 112 having the functional layer162 over which a sealant 141 and a liquid crystal material are appliedare attached under a reduced pressure, whereby a liquid crystal displaydevice can be manufactured. That is, an active matrix liquid crystaldisplay device can be manufactured, which includes the flexiblesubstrate 112 having the functional layer 162, the sealant 141, theactive matrix substrate 171, and a liquid crystal layer 142.

Through the above step, a liquid crystal display device can bemanufactured with a high yield. Further, a liquid crystal display devicethat is small-sized, thin, and lightweight can be manufactured.

Embodiment 1

In this embodiment, over a flexible substrate having a functional layerthat has a conductive layer serving as an antenna and an insulatinglayer, a baking temperature for forming the conductive layer, theresistance of the conductive layer, and the probability that peeling ispossible are shown with the use of FIG. 8 and Table 1.

A surface of a substrate was irradiated with a UV light plasma to removecontaminants from the surface of the substrate. After a silane couplingagent was deposited onto the substrate, a surface of the silane couplingagent was cleaned with ethanol and pure water, and a layer in whichoxygen and silicon are combined and an inactive group is combined withthe silicon was formed. Subsequently, a composition that containsparticles with a metal element was applied in the shape of a coil, andbaking was performed to form a conductive layer. Then, an insulatinglayer was formed over the layer in which oxygen and silicon are combinedand an inactive group is combined with the silicon and the conductivelayer. A functional layer formed of the conductive layer and theinsulating layer was peeled through with the use of an adhesive.

Here, fluoroalkyl silane was used as a silane coupling agent. After thesubstrate was heated for 10 minutes at 170° C. and fluoroalkyl silanewas deposited onto the surface of the substrate, the surface was cleanedwith ethanol and pure water to form a layer in which oxygen and siliconare combined and an inactive group is combined with the silicon with athickness of several nm to several tens of nm.

Further, as the composition that contains particles with a metalelement, a composition containing silver particles was used. Thiscomposition was applied by a printing method, and heating was performedfor 30 minutes at 160° C., 200° C., 300° C., 350° C., or 400° C. to forma conductive layer with a thickness of 30 μm.

As the insulating layer, an epoxy resin was applied by a printingmethod, and heating was performed for 30 minutes at 160° C. to bake theepoxy resin that has a thickness of 30 μm.

As the adhesive, an adhesive tape was used.

It is to be noted that a substrate over which the composition containingsilver particles was baked at a temperature of 160° C. was a PENsubstrate, and a substrate over which the composition containing silverparticles was baked at a temperature of 200 to 400° C. was a glasssubstrate. Further, by setting the number of samples for each heatingtemperature to be 10, an experiment was carried out.

The average value of the resistance of the conductive layer with respectto the baking temperature at this time and the probability that peelingis possible are shown in Table 1, and graph for showing the relationbetween a baking temperature and the resistance of the conductive layeris shown in FIG. 8.

TABLE 1 Resitance Value [O] Baking Temperature [° C.] Sample number 160200 300 350 400 450 1 36 29 13.9 11.5 8.74 7.8 2 36 28 13.5 10.2 8.759.1 3 36 31 14.2 10.8 8.8 8.2 4 35 34 13.9 11 8.46 7.8 5 37 36 14.1 10.58.15 7.8 6 38 27 14.6 10.1 8.36 7.9 7 40 29 13.8 11.9 8.8 8.9 8 38 2912.9 11.5 8.9 8.3 9 37 28 14.5 11.9 9.3 7.8 10 37 30 14.2 11.6 9.8 7.9Average Value 37 30.1 13.96 11.1 8.806 8.15 Provability for 100 100 10050 0 0 peeling (%)

According to Table 1, a baking temperature at which peeling is possiblewas less than 400° C., preferably 350° C. or less. According to FIG. 8,the resistance of the conductive layer serving as an antenna was 30Ω orless. Thus, in accordance with this embodiment, it was found that therange of a heating temperature at which a functional layer having aconductive layer that serves as an antenna can be peeled was greaterthan or equal to 200° C. and less than or equal to 350° C., preferablygreater than or equal to 200° C. and less than or equal to 300° C.

That is, a layer having functionality is peeled from the substrate,which is formed by heating at a temperature of greater than or equal to200° C. and less than or equal to 350° C., preferably greater than orequal to 200° C. and less than or equal to 300° C. over a substratehaving heat resistance, whereby a layer having functionality can beeasily formed.

Embodiment 2

In this embodiment, a manufacturing step of a semiconductor devicecapable of transmitting and receiving data wirelessly will be explainedwith reference to FIGS. 9A to 9E, FIGS. 10A to 10D, and FIGS. 11A to11C.

As shown in FIG. 9A, a peeling layer 202 is formed over a substrate 201,an insulating layer 203 is formed thereover, and a thin film transistor204 and an interlayer insulating layer 205 that insulates a conductivelayer forming a thin film transistor are formed thereover. In order tobe connected to a semiconductor layer of the thin film transistor, asource electrode and a drain electrode 206 are formed. Then, aninsulating layer 207 is formed, which covers the thin film transistor204, the interlayer insulating layer 205, and the source electrode andthe drain electrode 206. A conductive layer 208 that is connected to thesource electrode or the drain electrode 206 through the insulating layer207 is formed.

As the substrate 201, a glass substrate, a quartz substrate, a metal orstainless steel substrate with an insulating layer formed over onesurface, a plastic substrate that has enough heat resistance to resist atreatment temperature of this step, or the like is used. Since theaforementioned substrate 201 is not limited in size or shape, arectangular substrate with a length of 1 m or more on one side, forexample, can be used to drastically increase productivity. This point isa superior to that of a circular silicon substrate.

The peeling layer 202 is formed by a sputtering method, a plasma CVDmethod, a coating method, a printing method, or the like to be a singlelayer or a stacked layer made of an element selected from tungsten (W),molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel(Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium(Rh), palladium (Pd), osmium (Os), iridium (Ir), and silicon (Si); analloy material containing the element as its main component; or acompound material containing the element as its main component. Thecrystalline structure of a layer containing silicon may be amorphous,microcrystalline, or polycrystalline.

In a case where the peeling layer 202 has a single layer structure, atungsten layer, a molybdenum layer, or a layer containing a mixture oftungsten and molybdenum is preferably formed. Alternatively, a layercontaining tungsten oxide or tungsten oxynitride, a layer containingmolybdenum oxide or molybdenum oxynitride, or a layer containing oxideof a mixture of tungsten and molybdenum or oxynitride of a mixture oftungsten and molybdenum is formed. It is to be noted that the mixture oftungsten and molybdenum corresponds to an alloy of tungsten andmolybdenum.

In a case where the peeling layer 202 has a stacked layer structure, atungsten layer, a molybdenum layer, or a layer containing a mixture oftungsten and molybdenum is preferably formed as a first layer. Oxide oftungsten, molybdenum, or a mixture of tungsten and molybdenum; nitrideof tungsten, molybdenum, or a mixture of tungsten and molybdenum;oxynitride of tungsten, molybdenum, or a mixture of tungsten andmolybdenum; or nitride oxide of tungsten, molybdenum, or a mixture oftungsten and molybdenum is preferably formed as a second layer.

In a case where a stacked layer structure of a layer containing tungstenand a layer containing tungsten oxide is formed as the peeling layer202, the layer containing tungsten is formed, and an insulating layerformed from oxide is formed thereover, and a layer containing tungstenoxide in an interface between the tungsten layer and the insulatinglayer is formed, which may be utilized. Moreover, a surface of the layercontaining tungsten may be subjected to thermal oxidation treatment,oxygen plasma treatment, N₂O plasma treatment, treatment using asolution having strong oxidizability such as ozone water, or the like,thereby forming the layer containing tungsten oxide. A case of forming alayer containing tungsten nitride, a layer containing tungstenoxynitride, or a layer containing tungsten nitride oxide is similar tothe above. After forming the layer containing tungsten, a siliconnitride layer, a silicon oxynitride layer, and a silicon nitride oxidelayer may be formed.

Tungsten oxide is represented by WOx where x is in the range of 2≦x≦3.The x may be 2 (WO₂), 2.5 (W₂O₅), 2.75 (W₄O₁₁), 3 (WO₃), and the like.

Although the peeling layer 202 is formed in contact with the substrate201 in accordance with the above step, the present invention is notlimited to this step. An insulating layer to be a base may be formed soas to be in contact with the substrate 201, and the peeling layer 202may be provided in contact with the insulating layer.

The insulating layer 203 is formed using an inorganic compound by asputtering method, a plasma CVD method, a coating method, a printingmethod, or the like to be a single layer or a stacked layer. As atypical example of an inorganic compound, oxidized silicon or nitridedsilicon can be given.

Moreover, the insulating layer 203 may be formed to have a stacked layerstructure. For example, layers may be stacked using an inorganiccompound. Typically, silicon oxide, silicon nitride oxide, and siliconoxynitride may be stacked to form the insulating layer 203.

The thin film transistor 204 includes a semiconductor layer having asource region, a drain region, and a channel formation region; a gateinsulating layer; and a gate electrode.

The semiconductor layer is formed from a semiconductor having acrystalline structure, and a non-single crystalline semiconductor or asingle crystalline semiconductor may be used. In particular, acrystalline semiconductor that is crystallized by heat treatment or acrystalline semiconductor that is crystallized by combining heattreatment and irradiation of laser light is preferably applied. Duringheat treatment, a crystallization method can be applied using a metalelement such as nickel that operates to promote crystallization of asilicon semiconductor. Further, by heating during the crystallizationstep of the silicon semiconductor, a surface of the peeling layer can beoxidized to form a metal oxidized layer in the interface between thepeeling layer 202 and the insulating layer 203.

In a case where crystallization is performed by irradiation of laserlight in addition to heat treatment, the crystallization can beperformed by using continuous wave laser light or ultra short pulsedlaser light with a repetition rate of 10 MHz or higher and the pulsewidth of 1 nanosecond or shorter, preferably 1 to 100 picoseconds, insuch a way that a melting zone in which the crystalline semiconductor ismelted is moved continuously in a direction of irradiation of the laserlight. By such a crystallization method, a crystalline semiconductorthat has a large grain size with a crystal grain boundary extending inone direction can be obtained. By matching a carrier drifting directionto the direction where the crystal grain boundary is extended, theelectric field effect mobility of the transistor can be increased. Forexample, a mobility of 400 cm²/V·sec or higher can be achieved.

In a case where a crystallization process at a heat-resistancetemperature (approximately 600° C.) or lower of the glass substrate isused for the above crystallization step, a glass substrate having alarge size can be used. Therefore, a large quantity of semiconductordevices can be manufactured per substrate, and costs can be reduced.

Further, the semiconductor layer may be formed by performing acrystallization step by heating at a temperature of heat resistance ofthe glass substrate or higher. Typically, a quartz substrate is used forthe substrate 201, and an amorphous or microcrystalline semiconductor isheated at 700° C. or more, thereby forming the semiconductor layer. As aresult, a semiconductor having high crystallinity can be formed.Therefore, a thin film transistor of which properties such as a responsespeed and mobility are favorable and which is capable of high speedoperation can be provided.

The gate insulating layer is formed from an inorganic insulator such assilicon oxide and silicon oxynitride.

The gate electrode can be formed from a polycrystalline semiconductor towhich metal or an impurity of one conductivity type is added. In a caseof using metal, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum(Ta), aluminum (Al), or the like can be used. Metal nitride formed bynitriding metal may be also used. Alternatively, the gate electrode mayhave a structure in which a first layer made of the metal nitride and asecond layer made of the metal are stacked. In a case of the stackedlayer structure, an edge portion of the first layer may be projectedbeyond an edge portion of the second layer. At this time, by forming thefirst layer from metal nitride, a barrier metal can be obtained. Inother words, the metal of the second layer can be prevented fromdiffusing into the gate insulating layer or into the semiconductor layerthat is provided in the lower part of the gate insulating layer.

Various structures such as a single drain structure, an LDD(lightly-doped drain) structure, and a gate-overlapped drain structurecan be applied to the thin film transistor that is formed by combiningthe semiconductor layer, the gate insulating layer, the gate electrode,and the like. Here, a thin film transistor having a single drainstructure is employed. Moreover, a multi-gate structure wheretransistors, to which a gate voltage having the same potential isapplied equally are serially connected, a dual-gate structure where thesemiconductor layer is sandwiched by the gate electrode, an inverselystaggered thin film transistor where the gate electrode is formed overthe insulating layer 203 and the gate insulating layer and thesemiconductor layer are formed thereover, or the like can be applied.

The source electrode and drain electrode 206 are preferably formed bycombining a low-resistance material such as aluminum (Al), a barriermetal using a metal material that has a high melting point such astitanium (Ti) or molybdenum (Mo) to have a stacked-layer structure oftitanium (Ti) and aluminum (Al), or a stacked-layer structure ofmolybdenum (Mo) and aluminum (Al), or the like.

The interlayer insulating layer 205 and the insulating layer 207 areformed using polyimide, acryl, or siloxane polymer.

Furthermore, a semiconductor element of any structure may be providedinstead of the thin film transistor 204 as long as the semiconductorelement serves as a switching element. As a typical example of theswitching element, MIM (Metal-Insulator-Metal), a diode, or the like canbe given.

Next, as shown in FIG. 9B, a conductive layer 211 is formed over theconductive layer 208. Here, a composition that contains gold particlesis printed by a printing method, and then, heating is performed for 30minutes at 200° C. to bake the composition, thereby forming theconductive layer 211.

Subsequently, as shown in FIG. 9C, an insulating layer 212 for coveringthe insulating layer 207 and an edge portion of the conductive layer 211is formed. Here, after applying an epoxy resin by a spin coating method,the epoxy resin is heated for 30 minutes at 160° C. Then, the insulatinglayer in a portion where the conductive layer 211 is covered is removedto expose the conductive layer 211 and the insulating layer 212 is alsoformed. Here, a stacked body including the insulating layer 203 to theinsulating layer 212 is referred to as an element formation layer 210.

Then, as shown in FIG. 9D, in order to perform a-subsequent peeling stepeasily, the insulating layers 203, 205, 207, and 212 are irradiated withlaser light 213 to form an opening 214 as shown in FIG. 9E.Subsequently, an adhesive 215 is attached to the insulating layer 212.As the laser light used for forming the opening 214, laser light havinga wavelength that is absorbed by the insulating layers 203, 205, 207,and 212 is preferably used. Typically, laser light in a UV region, avisible region, or an infrared region is appropriately selected forirradiation.

As a laser oscillator capable of oscillating such laser light, anoscillator of an excimer laser such as an ArF laser, a KrF laser, or aXeCl laser; a gas laser such as a He laser, a He—Cd laser, an Ar laser,a He—Ne laser, a HF laser, or a C0 ₂ laser; a solid laser such as acrystal laser in which a crystal such as YAG, GdVO₄, YVO₄, YLF, or YAlO₃is doped with Cr, Nd, Er, Ho, Ce, Co, Ti, or Tm, a glass laser, or aruby laser; or a semiconductor laser such as a GaN laser, a GaAs laser,a GaAlAs laser, or an InGaAsP laser can be used. In the solid laseroscillator, the fundamental wave to the fifth harmonic wave may beappropriately used. As a result, the insulating layers 203, 205, 207,and 212 absorb and melt laser light to form the opening.

By eliminating the step of irradiating the insulating layers 203, 205,207, and 212 with laser light, throughput can be improved.

Next, as shown in FIG. 10A, a part 221 of the element formation layer ispeeled from the substrate 201 having the peeling layer by a physicalmeans by dividing a metal oxide layer formed in the interface betweenthe peeling layer 202 and the insulating layer 203. The physical meansrefers to a dynamic means or a mechanical means, which changes somedynamic energy (mechanical energy). The typical physical means refers tomechanical power addition (for example, peeling by a human hand or griptool, or separation treatment by rolling a roller).

In this embodiment, a method in which the metal oxide film is formedbetween the peeling layer and the insulating layer, and the elementformation layer 210 is peeled by a physical means by dividing the metaloxide film, is used; however, the present invention is not limitedthereto. A method can be used, in which, by using a substrate that has alight transmitting property for the substrate and using an amorphoussilicon layer containing moisture for the peeling layer, irradiation oflaser light from a substrate side is performed to vaporize moisturecontained in the amorphous silicon film after the step of FIG. 9E, andpeeling between the substrate and the peeling layer is performed.

Further, after the step of FIG. 9E, a method for removing the substrateby mechanically grinding the substrate or a method for removing thesubstrate using a solution for dissolving a substrate, such as HF, canbe used. In this case, the peeling layer may be unused.

In FIG. 9E, the following method can be used: a fluoride halogen gassuch as NF₃, BrF₃, or ClF₃ is introduced into the opening 214 beforeattaching the adhesive 215 to the insulating layer 212; after etchingthe peeling layer with a fluoride halogen gas, the adhesive 215 isattached to the insulating layer 212; and the element formation layer210 is peeled from the substrate.

In FIG. 9E, the following method can be also used: a fluoride halogengas such as NF₃, BrF₃, or ClF₃ is introduced into the opening 214 beforeattaching the adhesive 215 to the insulating layer 212; after etchingpart of the peeling layer with a fluoride halogen gas, the adhesive 215is attached to the insulating layer 212; and the element formation layer210 is peeled from the substrate by a physical means.

Next, as shown in FIG. 10A, the part 221 of the element formation layeris peeled from the peeling layer 202.

Subsequently, as shown in FIG. 10B, a flexible substrate 222 is attachedto the insulating layer 203 in the part 221 of the element formationlayer. Thereafter, the adhesive 215 is peeled from the part 221 of theelement formation layer.

Then, as shown in FIG. 10C, the flexible substrate 222 is attached to aUV tape 231 of a dicing frame 232. Since the UV tape 231 hasadhessiveness, the flexible substrate 222 is fixed over the UV tape 231.Thereafter, the conductive layer 211 is irradiated with laser light toenhance adhesion between the conductive layer 211 and the conductivelayer 208.

Subsequently, as shown in FIG. 10D, a connection terminal 233 is formedover the conductive layer 211. By forming the connection terminal 233,alignment with and attachment to a conductive layer serving as anantenna afterwards can be easily performed.

Next, as shown in FIG. 11A, the part 221 of the element formation layeris divided into parts. Here, the part 221 of the element formation layerand the flexible substrate 222 are irradiated with laser light 234 toform a groove 241 as shown in FIG. 11A, thereby dividing the part 221 ofthe element formation layer into a plurality. As for the laser light234, the laser light that is described for the laser light 231 can beapplied by being appropriately selected. Laser light that can beabsorbed by the insulating layers 203, 205, 206, and 212 and theflexible substrate 222 is preferably selected. Although the part of theelement formation layer is divided into a plurality by using a laser cutmethod here, a dicing method, a scribing method, or the like can beappropriately used instead of this method. As a result, the dividedelement formation layer is referred to as thin film integrated circuits242 a and 242 b.

Subsequently, a UV sheet of the dicing frame 232 is irradiated with UVlight to lower the adhesiveness of the UV sheet, and then, the thin filmintegrated circuits 242 a and 242 b are attached to an adhesive sheet243 of an expander frame 244. At this time, the adhesive sheet 243 isattached to the thin film integrated circuits 242 a and 242 b whilebeing extended, whereby the width of the groove 241 formed between thethin film integrated circuits 242 a and 242 b can be expanded. It is tobe noted that the expanded groove 246 preferably corresponds to the sizeof an antenna substrate attached to the thin film integrated circuits242 a and 242 b in a subsequent step.

Next, a flexible substrate having a conductive layer serving as anantenna is manufactured. First, as shown in FIG. 12A, a silane couplingagent is applied to a substrate 250, thereby forming a layer 251 inwhich oxygen and silicon are combined and an inactive group is combinedwith the silicon. Then, conductive layers 252 a and 252 b serving asantennas are formed thereover, and an insulating layer 253 for coveringthe conductive layers 252 a and 252 b is formed.

Here, a glass substrate is used as the substrate 250, and fluoroalkylsilane is used as for the layer 251 in which oxygen and silicon arecombined and an inactive group is combined with the silicon. Thesubstrate 250 is heated for 10 minutes at 170° C. to deposit fluoroalkylsilane onto a surface of the substrate, and then, the surface is cleanedwith ethanol and pure water to form a layer in which oxygen and siliconare combined and an inactive group is combined with the silicon with athickness of several nm to several tens of nm. As the conductive layers252 a and 252 b, a composition containing silver particles is applied bya printing method, and the composition is heated for 30 minutes at 300°C. and baked to form a conductive layer with a thickness of 30 μm. Asthe insulating layer 253, an epoxy resin is applied by a printingmethod, and the resin is heated for 30 minutes at 160° C. and baked toform the insulating layer 253 with a thickness of 30 μm.

As a shape of the conductive layer serving as an antenna at this time,in a case where an electromagnetic coupling system or an electromagneticinduction system (for example, a frequency of 13.56 MHz) is used as atransmission system of a signal in a semiconductor device,electromagnetic induction due to the change of magnetic field density isutilized; therefore, the conductive layer serving as an antenna can beformed to have a square coil shape 271 as shown in FIG. 14A or acircular coil shape (for example, a spiral antenna). Further, theconductive layer serving as an antenna can be formed to have a squareloop shape 272 as shown in FIG. 14B or a circular loop shape.

In a case where a microwave system (for example, the UHF band (afrequency of 860 to 960 MHz) or a frequency of 2.45 GHz) is used, theshape such as the length of the conductive layer serving as an antennamay be appropriately set in consideration of the wavelength of anelectromagnetic wave used for the transmission of the signal. Theconductive layer serving as an antenna can be formed to have a linedipole shape 273 as shown in FIG. 14C, a curved dipole shape, or aplanar shape (for example, a patch antenna).

Next, as shown in FIG. 12B, an adhesive 254 is attached to theinsulating layer 253, and then, the adhesive 254 is pulled up. As aresult, as shown in FIG. 12C, the layer in which oxygen and silicon arecombined and an inactive group is combined with the silicon is divided,and the conductive layers 252 a and 252 b and the insulating layer 253are peeled from the substrate 250. At this time, a part 251 b of thelayer in which oxygen and silicon are combined and an inactive group iscombined with the silicon remains over the substrate 250, and a part 251a of the layer in which oxygen and silicon are combined and an inactivegroup is combined with the silicon remains over a surface of theconductive layers 252 a and 252 b and the insulating layer 253.

Then, as shown in FIG. 12D, after removing the part of the layer inwhich oxygen and silicon are combined and an inactive group is combinedwith the silicon that remains over a surface of the conductive layers252 a and 252 b and the insulating layer 253, the conductive layers 252a and 252 b and the insulating layer 253 are attached to a flexiblesubstrate 256 where openings 255 are formed. At this time, alignment ofthe flexible substrate 256 and the conductive layers 252 a and 252 b isperformed so as to expose part of the conductive layers 252 a and 252 bthrough the openings 255.

Through the above step, a flexible substrate 257 that has the conductivelayers 252 a and 252 b serving as antennas is formed.

Next, as shown in FIG. 13A, the flexible substrate 257 that has theconductive layers 252 a and 252 b serving as antennas and the thin filmintegrated circuits 242 a and 242 b are attached to each other with theuse of anisotropic conductive adhesive agents 255 a and 255 b. At thistime, attachment is performed while aligning so as to connect theconductive layers 252 a and 252 b serving as antennas to the connectionterminal of the thin film integrated circuits 242 a and 242 b withconductive particles 254 a and 254 b contained in the anisotropicconductive adhesive agents 255 a and 255 b.

Here, the conductive layer 252 a serving as an antenna and the thin filmintegrated circuit 242 a are connected to each other through theconductive particle 254 a in the anisotropic conductive adhesive agent255 a. The conductive layer 252 b serving as an antenna and the thinfilm integrated circuit 242 b are connected to each other through theconductive particle 254 b in the anisotropic conductive adhesive agent255 b.

Subsequently, as shown in FIG. 13B, the thin film integrated circuitconnected to the flexible circuit 257 is divided in a region where theconductive layers 252 a and 252 b serving as antennas and the thin filmintegrated circuits 242 a and 242 b are not formed. Here, division iscarried out by a laser cut method in which the insulating layer 253 andthe flexible substrate 256 are irradiated with laser light 256.

Through the above step, as shown in FIG. 13C, semiconductor devices 262a and 262 b capable of transmitting and receiving data wirelessly can bemanufactured.

It is to be noted that the following step may be performed: the flexiblesubstrate 256 that has the conductive layers 252 a and 252 b serving asantennas and the thin film integrated circuits 242 a and 242 b areattached to each other with the use of the anisotropic conductiveadhesive agents 255 a and 255 b as shown in FIG. 13A; a flexiblesubstrate is provided to seal the flexible substrate 256 and the thinfilm integrated circuits 242 a and 242 b; the region where theconductive layers 252 a and 252 b serving as antennas and the thin filmintegrated circuits 242 a and 242 b are not formed is irradiated withthe laser light 261 as shown in FIG. 13B; and a semiconductor device 264as shown in FIG. 13D is manufactured. In this case, the thin filmintegrated circuit is sealed by the flexible substrate 256 and aflexible substrate 263 that are divided, whereby deterioration of thethin film integrated circuit can be suppressed.

By the above step, a semiconductor device that is thin and lightweightcan be manufactured with a high yield.

Embodiment 3

A structure of the semiconductor device capable of transmitting andreceiving data wirelessly of the above embodiment will be explained withreference to FIG. 16.

A semiconductor device of this embodiment is mainly formed by an antennaportion 2001, a power supply portion 2002, and a logic portion 2003.

The antenna portion 2001 is made of an antenna 2011 for receiving anexternal signal and transmitting data. As for a signal transmissionsystem in the semiconductor device, an electromagnetic coupling system,an electromagnetic induction system, a microwave system, or the like canbe used. The transmission system may be appropriately selected by apractitioner considering the use application. The most suitable antennamay be provided in accordance with the transmission system.

The power supply portion 2002 is made of a rectification circuit 2021for making a power supply by a signal received from an external portionthrough the antenna 2011, a storage capacitor 2022 for storing theelectric power supply that is made, and a constant voltage circuit 2023for making a constant voltage that is supplied to each circuit.

The logic portion 2003 includes a demodulation circuit 2031 fordemodulating a signal that is received, a clock generation andcompensation circuit 2032 for generating a clock signal, a circuit 2033for recognizing and determining each code, a memory controller 2034 formaking a signal for reading data from a memory by the received signal, amodulation circuit 2035 for transmitting an encode signal to thereceived signal, an encode circuit 2037 for encoding data that is readout, and a mask ROM 2038 for storing data. It is to be noted that themodulation circuit 2035 includes a modulation resistor 2036.

As a code that is recognized and determined by the circuit 2033 forrecognizing and determining each code, an end of frame (EOF) signal, astart of frame (SOF) signal, a flag, a command code, a mask length, amask value, and the like are given. Further, the circuit 2033 forrecognizing and determining each code includes a cyclic redundancy check(CRC) function for identifying a transmission error.

In the semiconductor device of this embodiment, an antenna that haslittle variation in inductance from among a plurality of antennas thatare formed at the same time can be used. In addition, an antenna havinghigh electromotive force can be used. As a result, a semiconductordevice that has little variation can be manufactured. Further, throughuse of a functional layer that is formed over a flexible substrate, asemiconductor device that is small-sized, thin, and lightweight can beachieved.

Embodiment 4

The semiconductor device capable of transmitting and receiving datawirelessly as shown above is acceptable for a wide range of products.For example, the semiconductor device can be applied to bills, coins,securities, bearer bonds, identification certificates (a driver'slicense, a certificate of residence, and the like, see FIG. 17A),containers for package (wrapping paper, bottles, and the like, see FIG.17C), recording media (DVD software, video tapes, and the like, see FIG.17B), vehicles (bicycles and the like, see FIG. 17D), personalbelongings (bags, glasses, and the like), foods, plants, animals, humanbodies, clothes, commodities, electronic appliances, baggage tags (seeFIGS. 17E and 17F), and the like. The electronic appliances include aliquid crystal display device, an EL display device, a television device(also referred to as simply a TV, a TV receiver, or a televisionreceiver), a cellular phone, and the like.

A semiconductor device 9210 of this embodiment is fixed to a product bybeing mounted on a printed substrate, attached to a surface of theproduct, or embedded inside the product. For example, if the product isa book, the semiconductor device 9210 is fixed to the book by embeddingit inside the paper, and if the product is a package made from anorganic resin, the semiconductor device 9210 is fixed to the package byembedding it inside the organic resin. Since the semiconductor device9210 of this embodiment can achieve a device that is small-sized, thin,and lightweight, the design quality of the product itself is notdegraded even after the semiconductor device is fixed to the product. Byproviding the semiconductor device 9210 in bills, coins, securities,bearer bonds, identification certificates, and the like, a certificationfunction can be provided and forgery can be prevented through use of thecertification function. Moreover, when the semiconductor device of thisembodiment is provided in containers for package, recording media,personal belongings, foods, clothes, commodities, electronic appliances,and the like, systems such as an inspection system can become moreefficient.

Embodiment 5

As an electronic appliance having the semiconductor device shown inEmbodiment Modes 2 to 4, a television device (also referred to as simplyTV or a television receiver), a camera such as a digital camera or adigital video camera, a cellular phone device (also referred to assimply cellular phone set or cellular phone), a portable informationterminal such as a PDA, a portable game machine, a monitor for acomputer, a computer, an audio reproducing device such as a car audiocomponent, an image reproduction device provided with a recording mediumsuch as a home game machine, and the like can be given. Specificexamples thereof will be explained with reference to FIGS. 18A to 18F.

A portable information terminal shown in FIG. 18A includes a main body9201, a display portion 9202, and the like. A display device using theflexible substrate shown in Embodiment Modes 2 to 4 can be applied tothe display portion 9202. By using the display device as one aspect ofthe present invention, a lightweight and small-sized portableinformation terminal can be provided.

A digital video camera shown in FIG. 18B includes a display portion9701, a display portion 9702, and the like. A display device using theflexible substrate shown in Embodiment Modes 2 to 4 can be applied tothe display portion 9701. By using the display device as one aspect ofthe present invention, a small-sized digital video camera can beprovided.

A portable terminal shown in FIG. 18C includes a main body 9101, adisplay portion 9102, and the like. A display device using the flexiblesubstrate shown in Embodiment Modes 2 to 4 can be applied to the displayportion 9102. By using the display device as one aspect of the presentinvention, a small-sized portable terminal can be provided.

A portable television device shown in FIG. 18D includes a main body9301, a display portion 9302, and the like. A display portion using theflexible substrate shown in Embodiment Modes 2 to 4 can be applied tothe display portion 9302. By using the display device as one aspect ofthe present invention, a small-sized and lightweight portable televisiondevice can be provided. Such a television device can be applied in awide range to various televisions such as a small-sized one mounted in aportable terminal such as a cellular phone, a medium-sized one that isportable, and a large-sized one (e.g., one 40 inches or more in size).

A portable computer shown in FIG. 18E includes a main body 9401, adisplay portion 9402, and the like. A display device using the flexiblesubstrate shown in Embodiment Modes 2 to 4 can be applied to the displayportion 9402. By using the display device as one aspect of the presentinvention, a lightweight and small-sized computer can be provided.

A television device shown in FIG. 18F includes a main body 9601, adisplay portion 9602, and the like. A display device using the flexiblesubstrate shown in Embodiment Modes 2 to 4 can be applied to the displayportion 9602. By using the display device as one aspect of the presentinvention, a small-sized television device can be provided.

This application is based on Japanese Patent Application serial no.2005-327951 filed in Japan Patent Office on Nov. 11 in 2005, the entirecontents of which are hereby incorporated by reference.

1. A method for manufacturing a semiconductor device, comprising thesteps of: forming a first peeling layer comprising a silane couplingagent over a first substrate; forming a first conductive layer over thefirst peeling layer; forming a first insulating layer covering the firstconductive layer; peeling the first conductive layer and the firstinsulating layer from the first substrate; attaching a second substrateto the first conductive layer and the first insulating layer; forming asecond peeling layer comprising a silane coupling agent over a thirdsubstrate forming a second conductive layer over the second peelinglayer; forming a second insulating layer covering the second conductivelayer; peeling the second conductive layer and the second insulatinglayer from the third substrate; attaching a fourth substrate to thesecond conductive layer and the second insulating layer; forming asealant over the second substrate or the fourth substrate; coating aregion surrounded by the sealant with a liquid crystal material; andattaching the second substrate having the first conductive layer and thefirst insulating layer and the fourth substrate having the secondconductive layer and the second insulating layer with the sealant.
 2. Amethod for manufacturing a semiconductor device, comprising the stepsof: forming a first peeling layer in which oxygen and silicon arecombined and an inactive group is combined with the silicon over a firstsubstrate; forming a first conductive layer over the first peelinglayer; forming a first insulating layer covering the first conductivelayer; peeling the first conductive layer and the first insulating layerfrom the first substrate at a portion including the first peeling layeror at a boundary between the first peeling layer and the firstconductive layer; attaching a second substrate to the first conductivelayer and the first insulating layer; forming a second peeling layer inwhich oxygen and silicon are combined and an inactive group is combinedwith the silicon over a third substrate; forming a second conductivelayer over the second peeling layer; forming a second insulating layercovering the second conductive layer; peeling the second conductivelayer and the second insulating layer from the third substrate at aportion including the second peeling layer or at a boundary between thesecond peeling layer and the second conductive layer; attaching a fourthsubstrate to the second conductive layer and the second insulatinglayer; forming a sealant over the second substrate or the fourthsubstrate; coating a region surrounded by the sealant with a liquidcrystal material; and attaching the second substrate having the firstconductive layer and the first insulating layer and the fourth substratehaving the second conductive layer and the second insulating layer withthe sealant.
 3. A method for manufacturing a semiconductor deviceaccording to claim 1, further comprising: attaching a first adhesive tothe first insulating layer after forming the first insulating layer. 4.A method for manufacturing a semiconductor device according to claim 2,further comprising: attaching a first adhesive to the first insulatinglayer after forming the first insulating layer.
 5. A method formanufacturing a semiconductor device according to claim 1, furthercomprising: attaching a second adhesive to the second insulating layerafter forming the second insulating layer.
 6. A method for manufacturinga semiconductor device according to claim 2, further comprising:attaching a second adhesive to the second insulating layer after formingthe second insulating layer.
 7. A method for manufacturing asemiconductor device according to claim 2, further comprising: removinga remaining peeling layer after peeling the first conductive layer andthe first insulating layer.
 8. A method for manufacturing asemiconductor device according to claim 1, wherein the first conductivelayer is a pixel electrode.
 9. A method for manufacturing asemiconductor device according to claim 2, wherein the first conductivelayer is a pixel electrode.
 10. A method for manufacturing asemiconductor device according to claim 1, wherein the second conductivelayer is an opposite electrode.
 11. A method for manufacturing asemiconductor device according to claim 2, wherein the second conductivelayer is an opposite electrode.
 12. A method for manufacturing asemiconductor device according to claim 1, wherein the first peelinglayer and the second peeling layer are formed by coating with the silanecoupling agent.
 13. A method for manufacturing a semiconductor deviceaccording to claim 1, wherein each of the first substrate and the thirdsubstrate is a substrate selected from the group consisting of a glasssubstrate, a quartz substrate, a ceramic substrate, a metal substrateand a silicon wafer.
 14. A method for manufacturing a semiconductordevice according to claim 2, wherein each of the first substrate and thethird substrate is a substrate selected from the group consisting of aglass substrate, a quartz substrate, a ceramic substrate, a metalsubstrate and a silicon wafer.
 15. A method for manufacturing asemiconductor device according to claim 1, wherein each of the secondsubstrate and the fourth substrate is a flexible substrate.
 16. A methodfor manufacturing a semiconductor device according to claim 2, whereineach of the second substrate and the fourth substrate is a flexiblesubstrate.